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RSR025N03
Transistors
4V Drive Nch MOS FET
RSR025N03
Structure
External dimensions (Unit : mm)
Silicon N-channel
MOS FET
TSMT3
2.9
0.4
1.0MAX
0.85
0.7
(3)
Features
0~0.1
1) Low on-resistance.
(1)
(2)
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .
(1) Gate
0.95 0.95
1.9
0.16
Each lead has same dimensions
Application
Power switching, DC / DC converter.
Packaging specifications
(2) Source
(3) Drain
Abbreviated symbol : QY
Equivalent circuit
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
(3)
(3)
RSR025N03
(1)
? 2
(1)
(2)
? 1
Absolute maximum ratings (Ta=25 ° C)
Parameter
Symbol
Limits
Unit
(2)
(1) Gate
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
V DSS
V GSS
I D
I DP ? 1
I S
I SP ? 1
P D ? 2
Tch
Tstg
30
20
± 2.5
± 10
0.8
3.2
1
150
? 55 to 150
V
V
A
A
A
A
W
° C
° C
(2) Source
(3) Drain
? A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
? 1 Pw ≤ 100 μ s, Duty cycle ≤ 2%
? 2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a) ?
Limits
125
Unit
° C / W
? 2 Mounted on a ceramic board.
Rev.C
1/3
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